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Properties of Pt/Ti Contacts to III-V Materials

  • A. Katz (a1), S. Nakahara (a1), S. N. G. Chu (a1), B. E. Weir (a1), C. R. Abemathy (a1), W. S. Hobson (a1), S. J. Pearton (a1) and W. Savin (a2)...


Pt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.



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[1] Singh, R., Thakur, R. P. S., Katz, A., Nelson, A. J., Gebhard, S. C. and Swartzlander, A. B., in Appl. Phys. Lett., 57, 1239 (1990).
[2] Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C. and Johnston, W. D. Jr., J. Appl. Phys., 67, 3754 (1990).
[3] Katz, A., Weir, B. E., Chu, S. N. G., Thomas, P. M., Soler, M., Boone, T. and Dautremont-Smith, W. C., J. Appl. Phys., 67, 3872 (1990).
[4] Katz, A., Nakahara, S., Savin, W. and Weir, B. E., J. Appl. Phys., 68,4133 (1990).
[5] Katz, A., Chu, S. N. G., Weir, B. E., Dautremont-Smith, W. C., Logan, R. A. and Tanbun-EK, T., J. Appl. Phys., to be published.
[6] Katz, A., Abernathy, C. R., Pearton, S. J. and Weir, B. E., J. Appl. Phys., to be published.
[7] Pearton, S. J. and Caruso, R., J. Appl. Phys., 67 (1989).
[8] Katz, A., Thomas, P. M., Chu, S. N. G., Dautremont-Smith, W. C., Sobers, R. G. and Napholtz, S. G., J. Appl. Phys., 67, 884 (1990).
[9] See for example Woodal, J., Braslan, N. and Freeouf, J. L., in “Physics of Thin Films”, Ed. by Francombe, M. H. and Vossen, J. L. (Academic Press Inc., New York, 1987), 199225.
[10] Katz, A. and Dautremont-Smith, W. C., J. Appl. Phys., 67, 6237 (1990).
[11] Katz, A. and Nakahara, S., unpublished results.
[12] Katz, A., Dautremont-Smith, W. C., Chu, S. N. G., Thomas, P. M., Koszi, L. A., Lee, J. W., Riggs, V. G., Brown, R. L., Napholtz, S. G., and Zilko, J. L., Appl. Phys. Lett., 54, 2306 (1989).
[13] Katz, A., Weir, B. E. and Dautremont-Smith, W. C., J. Appl. Phys., 68, 1123 (1990).


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