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Properties of Patterned Gallium Arsenide on Silicon

  • R.J. Matyi (a1), H. Shichijo (a1), T.S. Kim (a1) and H.L. Tsai (a1)

Abstract

The growth of GaAs on Si by MBE through openings in an oxide or nitride represents a convenient means for achieving monolithic GaAs/Si integration. We have examined a number of the materials growth and processing issues that must be resolved in order to achieve this goal. Some of the specific areas that have been investigated are (a) the effect of trench etching on the morphology of the patterned GaAs; (b) the dependence of patterned feature size on Hall mobility in both as-grown and postgrowth annealed samples; (c) the effect of annealing on the defect structure in the transition region from single crystal GaAs to polycrystalline growth; (d) the dependence of GaAs MESFET performance on proximity to the polycrystal transition; and (e) the performance of Si MOS devices following the GaAs MBE growth. Specific growth and processing issues concerning the integration of GaAs and Si device functions have also been examined.

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1 Matyi, R.J., Shichijo, H., Moore, T.M., and Tsai, H.L., Appl. Phys. Lett., 51, 18 (1987).
2 Matyi, R.J., Shichijo, H. and Tsai, H.L., J. Vac. Sci. Tech., in press.
3 Chand, N., People, R., Baiocchi, F.A., Wecht, K.W., and Cho, A.Y., Appl. Phys. Lett., 49, 815 (1986).
4 Lee, J.W., Shichijo, H., Tsai, H.L., and Matyi, R. J., Appl. Phys. Lett., 50, 31 (1987).
5 Lee, J.W. in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Proc. 67, Pittsburg, PA 1986), p. 29.
6 Choi, H.K., Turner, G.W., and Tsaur, B.Y., IEEE Elect. Dev. Lett., EDL–7, 241 (1986).
7 Choi, H.K., Turner, G.W., Windhorn, T.H., and Tsaur, B.Y., IEEE Elect. Dev. Lett., EDL–7, 500 (1986).

Properties of Patterned Gallium Arsenide on Silicon

  • R.J. Matyi (a1), H. Shichijo (a1), T.S. Kim (a1) and H.L. Tsai (a1)

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