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Properties of Low-Resistivity Undoped indium-Oxide Films Grown by Reactive Ion Plating and Electrochromic Tungsten-Oxide Films Grown by Electron-Beam Evaporation

Published online by Cambridge University Press:  21 February 2011

Y. P. Lee ,
J. I. Jeong ,
J. H. Moon ,
J. H. Hong  and
J. S. Kang
Y. P. Lee
Affiliation:
Sunmoon University, asan, Choongnam, Korea
J. I. Jeong
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. H. Moon
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. H. Hong
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. S. Kang
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
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Abstract

The use of gaseous discharge for ion plating and related techniques have been well known to improve coating properties in several ways. IN the arc-induced ion plating (AIIP), the ionization efficiency for the evaporants is so enhanced without any introduction of inert gases that the bias voltage for, and the temperature of the substrate are reduced in the preparation of the coatings. Highly transparent (> 90% transmission in the visible range) and highly conductive (resistivity ≅ 1.5 x 10-4 Ω cm) in-oxide films were deposited at a rate of 500 - 900 Å/min by aIIP of pure in in an O2 atmosphere of 10-4 Torr. Hall-effect measurement revealed that the observed low resistivity is due primarily to the excellent electron mobilty (≥ 70 cm2 / V sec) with carrier density up to 7 х 1020/cm3. Electrochromic WO3 films were also prepared and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 427
Copyright
Copyright © Materials Research Society 1995

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