Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-20T21:34:27.249Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Large Grain-Size poly-Si Films by Catalytic Chemical Sputtering

Published online by Cambridge University Press:  17 March 2011

Atsushi Masuda ,
Koji Kamesaki ,
Akira Izumi  and
Hideki Matsumura
Atsushi Masuda
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Koji Kamesaki
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Akira Izumi
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Hideki Matsumura
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Get access

Abstract

Large grain-size polycrystalline Si (poly-Si) films are obtained on glass substrate by newly developed catalytic chemical sputtering method at low temperatures around 400 C. Si films are also epitaxially grown on (100) single-crystalline Si substrates. In the method Si films are deposited by the chemical transport of SiH4 species generated by the reaction between solid Si target and catalytically generated H atoms. Efficient deposition is realized using the remarkable difference in the etch rate depending on Si target temperatures. That is, SiH4 species are efficiently generated on cooled Si target by atomic-H etching and deposited on substrates with suppressed etching phenomena by heating. Full-width at half maximum of transverse-optical Raman signals originating from crystalline phase for the obtained poly-Si films is narrower than that for poly-Si prepared by excimer-laser annealing. It was noticeable that the grain size exceeds 1 m for the films with a thickness of about 1 m. Growth mode of poly-Si films especially in the initial stage is remarkably changed with a difference in the substrate material. It was found that formation of seed layer enhances the growth of poly-Si films on glass substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A4.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

[1] Veprek, S. and Marecek, V., Solid-State Electron. 11, 683 (1968).Google Scholar
[2] Summonte, C., Rozzoli, R., Desalvo, A., Zignani, F., Centurioni, E., Pinghini, R., and Gemmi, M., J. Non-Cryst. Solids 266–269, 624 (2000).10.1016/S0022-3093(99)00755-3Google Scholar
[3] Honda, N., Masuda, A. and Matsumura, H., J. Non-Cryst. Solids 266–269, 100 (2000).Google Scholar
[4] Nozaki, Y., Kitazoe, M., Horii, K., Ohara, K., Morita, D., Umemoto, H., Masuda, A. and Matsumura, H., Ext. Abst. 48th Spring Meeting Japan Society of Applied Physics and Related Societies, Tokyo, 2001, p. 950 [in Japanese].Google Scholar
[5] Matsumura, H., Kamesaki, K., Masuda, A. and Izumi, A., Jpn. J. Appl. Phys. 40, L289 (2001).Google Scholar
[6] Kamesaki, K., Masuda, A., Izumi, A. and Matsumura, H., Ext. Abst. 1st Int. Conf. Cat-CVD (Hot-Wire CVD) Process, Kanazawa, 2000, p. 85 and Proc. published in Thin Solid Films, in press.Google Scholar
[7] Masuda, A., Ishibashi, Y., Izumi, A. and Matsumura, H., Dig. Tech. Papers 2000 Int. Workshop Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials, Tokyo, 2000, p. 219.Google Scholar
[8] Komoda, M., Kamesaki, K., Masuda, A. and Matsumura, H., Ext. Abst. 1st Int. Conf. Cat-CVD (Hot-Wire CVD) Process, Kanazawa, 2000, p. 163 and Proc. published in Thin Solid Films, in press.Google Scholar
[9] Kojima, T., Toyoda, H., Kitagawa, M., Nishitani, M. and Sugai, H., Ext. Abst. 60th Autumn Meeting Japan Society of Applied Physics, Kobe, 1999, p. 803 [in Japanese].Google Scholar
[10] unpublished.Google Scholar
[11] Nelson, B. P., Wang, Q., Iwaniczko, E., Mahan, A. H. and Crandall, R. S., Mater. Res. Soc. Symp. Proc. 507, 927 (1998).Google Scholar