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Properties of Ion Beam Synthesized Iron Disilicide Dots

  • M. Galli (a1), F. Marabelli (a1), A. Pagetti (a1), M.G. Grimaldi (a2), S. Coffay (a3), C. Spinella (a3) and L. Miglio (a4)...

Abstract

Semiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties.

In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.

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1. Oostra, D. J., Bulle-Lieuwma, C. W. T., Vandenhoudt, D. E. W., Felten, F., Jans, J. C., J. Appl. Phys. 74, 4347 (1993).10.1063/1.354401
2. Leong, D., Harry, M., Reeson, K. J., Homewood, K. P., Nature 387, 686 (1997).10.1038/42667
3. Higgs, V., Lightowlers, E.C., Davies, G.. Schäffler, F, Kasper, E., Semicond. Sci. Technol. 4, 593 (1989).10.1088/0268-1242/4/7/019
4. Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Washburn, J., Liliental-Weber, Z., Appl.Phys.Lett. 63, 105 (1993).10.1063/1.109727
5. Geddo, M., private communication.

Properties of Ion Beam Synthesized Iron Disilicide Dots

  • M. Galli (a1), F. Marabelli (a1), A. Pagetti (a1), M.G. Grimaldi (a2), S. Coffay (a3), C. Spinella (a3) and L. Miglio (a4)...

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