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Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

  • M. G. Cheong (a1), K. S. Kim (a1), C. S. Kim (a1), R. J. Choi (a1), H. S. Yoon (a1), S. W. Yu (a1), Y. K. Hong (a1), C.-H. Hong (a1), E.-K. Suh (a1) and H. J. Lee (a1)...

Abstract

Optical and structural properties of InGaN/GaN quantum wells having growth interruption were investigated using high-resolution x-ray diffraction, photoluminescence and transmission microscopy. InxGa1−xN/GaN (x>0.25) six pair quantum wells used in this study were grown on c- plane sapphire by metalorganic chemical vapor deposition. The growth interruption was carried out by closing the group-III metal organic sources before and after growth of InGaN quantum well layers. With increasing the interruption time, the quantum dot-like region and well thickness decreases due to indium re-evaporation or thermal etching effect. As a result, PL peak position is blue-shifted and intensity is reduced. The size and number of V-defect did not vary with interruption time. The interruption time is not directly related with formation of the defect. The V-defect in quantum wells originates at threading dislocations and inversion domain boundaries due to higher misfit strain.

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1. Nakamura, S., Senoh, M., Iwasa, N., and Nagaham, S., Jpn. J. Appl. Phys. Lett. Part1 34, 797 (1995)
2. Ponce, F. A. and Bour, D. P., Nature (London). 386, 351 (1997)
3. Uchida, K., , M.Kawata, Yang, T., , A.Miwa, and Gotoh, J., Jpn. J. Appl. Phys. 37, L571 (1998)
4. Cheong, M. G., Kim, C. S., Choi, R. J., Yoon, H. S., Hong, C.-H., Suh, E. K., and Lee, H. J., J. Korean Phys. Soc. Will be publsihed
5. Narukawa, Y., , Y.Kawakami, Funato, M., , S.Fujita, and Nakamura, S., Appl. Phys. Lett. 70 981 (1997)
6. McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Appl. Phys. Lett. 72, 1730 (1998)
8. Mahanty, S., , M.Hao, Sugahara, T., Fareed, R. S. Q., , Y.Morishima, Naoi, Y., , T.Wang, and Sakai, S. Materials Letters 41, 67 ( 1999)
9. Sun, C. J., Anwar, M. Zubair, Chen, Q., Yang, J. W., Khan, M. Asif, Shur, M. S., Byhhovski, A. D., Liliental-Weber, Z., , C.Kisielowski, Smith, M., Lin, J. Y., and Xiang, H. X. Appl. Phys.Lett, 70, 2978 (1997)
10. Cho, H. K., Lee, J. Y., Kim, K. S., and Yang, G. M., Appl. Phys. Lett. 247, 77 ( 2000)
11. Hiramatsu, K., , Y.Kawaguchi, Shimizu, M., , N.Sawaki, Zheleva, T., Davis, R. F., , H.Tsuda, Taki, W., Kuwano, N., and Oki, K.. Internet Journal of Nitride Semiconductor Research 2, 6 (1997)
12. Kim, I. H., Park, H. S., Park, Y. I., and Kim, T., Appl. Phys. Lett. 73, 1634 (1998)
13. Hirthe, J. P., , J.Lothe, Theory of Dislocations, (Wiley and Sons, 1982), Chap. 3.
14. Chichibu, S., Azuhata, T., Sato, T. and Nakamura, S., Jpn. J. Appl. Phys. 70, 2822 (1997)
15. Domen, K., Kuramata, A. and Tanashashi, T., Appl. Phys. Lett. 72, 1539 (1998)
16. Nakamura, S., , M.Senoh, nagahama, S., , N.Iwasa, Yamada, T., , T.Matsushita, Sugaimoto, Y., and Kikyokau, H., Appl. Phys. Lett. 70, 2753 (1997)
17. Cho, Y. H., Gainer, G. H., Fischer, A. J., Song, J. J., , S.Keller, Mishra, U. K., and DenBaars, S. P.. Appl. Phys. Lett. 73, 1370 ( 1998).

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