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Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD

Published online by Cambridge University Press:  01 February 2011

Hideki Matsumura ,
Kouichi Katouno ,
Masaya Itoh  and
Atsushi Masuda
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, JAPAN, E-Mail;h-matsu@jaist.ac.jp
Kouichi Katouno
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, JAPAN, E-Mail;h-matsu@jaist.ac.jp
Masaya Itoh
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, JAPAN, E-Mail;h-matsu@jaist.ac.jp
Atsushi Masuda
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, JAPAN, E-Mail;h-matsu@jaist.ac.jp
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Abstract

Properties of p-type μc-Si prepared by Cat-CVD (Catalytic Chemical Vapor Deposition), often called Hot-Wire CVD, are studied for possible application to window layer of a-Si solar cells. Electrical, structural and optical properties are investigated. It is concluded that Cat-CVD p-type μc-Si is a suitable material as a window layer for Cat-CVD a-Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A13.2
Copyright
Copyright © Materials Research Society 2003

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References

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