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Properties Of Epitaxial Cdte On Si(lll) With a (Ca,Ba)F2 Buffer Layer

Published online by Cambridge University Press:  28 February 2011

H. Zogg  and
S. Blunier
H. Zogg
Affiliation:
Afif at Swiss Federal Institute of Technology, Eth-Hönggerberg HPT, CH-8093 Zürich, Switzerland.
S. Blunier
Affiliation:
Afif at Swiss Federal Institute of Technology, Eth-Hönggerberg HPT, CH-8093 Zürich, Switzerland.
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Abstract

Epitaxial CdTe has been grown onto Si(lll) wafers by MBE with the aid of a composition graded (Ca,Ba)F2 buffer layer to surmount the large misfit of 19%. Untwinned CdTe layers with smooth surfaces, narrow X-ray lines and strong photoluminescence with a narrow near band edge peak were obtained. The results indicate a comparable structural quality to well known CdTe layers on sapphire, InSb or GaAs used as buffers to grow (Hg, Cd)Te for IR-device applications. In addition, the CdTe layers are near strain free despite a large thermal expansion mismatch. This is most probably due to dislocations which are able to move along the fluoride/Si interface even after growth and down to near room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 375
Copyright
Copyright © Materials Research Society 1987

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References

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