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Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

Published online by Cambridge University Press:  25 February 2011

Hideki Matsumura ,
Masaaki Yamaguchi  and
Kazuo Morigaki
Hideki Matsumura
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi-Hiroshima 724, Japan
Masaaki Yamaguchi
Affiliation:
Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
Kazuo Morigaki
Affiliation:
Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
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Abstract

Hydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 499
Copyright
Copyright © Materials Research Society 1990

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References

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