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Properties of a-Si:H and a-SiGe:H Films Deposited by Photo-Assisted CVD

  • R. E. Rocheleau (a1), S. C. Jackson. (a1), S. S. Hegedus (a1) and B. N. Baron (a1)

Abstract

Chemical vapor deposition techniques, in particular plasma enhanced CVD, have been used to produce high quality a-Si:H materials. Continuing research is directed toward increased device performance, improved stability, and translation of scale to commercial production. A part of this effort is the evaluation of alternate CVD techniques which in addition to providing technical options for high efficiency and long term stability are likely to lead to improved understanding of the relationships between deposition processes and material properties. A relatively new technique for depositing a-Si:H is photo-CVD which utilizes ultraviolet light to initiate the decomposition of silane or disilane. The best results from both materials properties and device efficiency points of view have been achieved using mercury sensitized photo-CVD. Recently, a 10.5% efficient a-Si:H p-i-n photovoltaic cell, fabricated by photo-CVD, was reported [1]. A limitation in photo-CVD has been preventing deposition on the UV transparent window. In this paper we describe a new photo-CVD reactor with a moveable UV-transparent Teflon film and secondary gas flows to eliminate window fouling. The deposition and opto-electronic characterization of intrinsic a-Si:H and a-SiGe:H and p-type a-SiC:H are described. Finally, preliminary results of p-i-n solar cells are presented.

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References

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1. Konagai, M. et al. Presented at 18th IEEE Photovoltaics Specialists Conference, Las Vegas, Nevada October 1985.
2. Mackenzie, K. et al. Phys. Rev. B. 31(4), 2198(1985).
3. Rudder, R. et al. Appl. Phys. Lett. 45(8), 887(1984).

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