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Propagation of Si-Network in Hr-Cvd and Spontaneous Chemical Deposition

  • Jun-Ichi Hanna (a1), Akira Kamo (a2), Masanobu Azuma (a2), Naoki Shibata (a2), Hajime Shirai (a2) and Isamu Shimizu (a2)...

Abstract

In comparison with the Si:H films the conformational changes in the Si:H(F) networks of the films prepared by HRCVD and Spontaneous Chemical Deposition were investigated systematically in terms of the effects of the substrate temperature and the promoters. Fluorine participation in the chemical processes of the film growth favored the reduction of terminators without degradation of the Si network and promoted the propagation of closely packed Si network, leading to the crystal growth at a low temperature.

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Propagation of Si-Network in Hr-Cvd and Spontaneous Chemical Deposition

  • Jun-Ichi Hanna (a1), Akira Kamo (a2), Masanobu Azuma (a2), Naoki Shibata (a2), Hajime Shirai (a2) and Isamu Shimizu (a2)...

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