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Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces

  • Karsten Henkel (a1), Mohamed Torche (a2), Rakesh Sohal (a3), Carola Schwiertz (a4), Patrick Hoffmann (a5) and Dieter Schmeißer (a6)...

Abstract

We combine high-k dielectrics with wide band gap semiconductors for new possibilities for high frequency and high power applications. We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of metal layer (M), PrOx (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as semiconductor substrates (S). Our approach consists both, electrical measurements and spectroscopic characterization to analyze properties of the various interfaces within the stacks.

For the electrical measurements we produce PrOx layers in the thickness range of 10nm to 240nm. We use capacitance-voltage analysis and determine permittivity values of 8 to 20 depending on physical thickness resulting in an equivalent oxide thickness (EOT) down to 5nm. These data are consistent with the formation of a Pr-silicate between Si and PrOx.

In order to prevent interface reactions and to improve the band alignment an interfacial layer is introduced into the stack between the semiconductor and the high-k material. We find aluminum oxynitride (AlON) as a suitable layer which reduces the interface state density to a mean value of 5E11cm2/Vs and the leakage current (1V above flat band) below 1E-5A/cm2.

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1 Zolper, J.C., and Skowronski, M: MRS Bull. 30, 273 (2005).
2 Zschech, E. et al.: Advances in Solid State Physics 45, 375 (2005).
3 Torche, M., Henkel, K., and Schmeiβer, D.: Mater. Sci. Eng. C (2006) in press.
4 Goryachko, A. et al.: Phys. Status Solidi C 1 (2), 265 (2004).
5 Schmeiβer, D., Müssig, H.-J., and Dabrowski, J.: Appl. Phys. Lett. 85 (1), 88 (2004).
6 Robertson, J.: J. Non-Cryst. Solids 303, 94 (2002)
7 Kukli, K. et al.: Chem. Mater. 16, 5162 (2004).
8 Schmeiβer, D., Müssig, H.-J.: J. Phys.-Condens. Mat. 16, S153 (2004).
9 Afanas'ev, V.V. et al.: Appl. Phys. Lett. 82 (6) 922 (2003).
10 Ance, C. et al.: Appl. Phys. Lett. 60 (11), 1399 (1992).
11 Brown, D.M. et al.: J. Electrochem. Soc. 115 (1968) 311
12 Yamashita, H., Fukui, K., Misawa, S., and Yoshida, S.: J. Appl. Phys. 50, 896 (1979).
13 Collins, A.T., Lightowlers, E.C., and Dean, P.J.: Phys. Rev. 158 (3), 833 (1967)
14 Goryachko, A. et al.: Phys. Status Solidi A 201, 245 (2004).
15 Hoffmann, P., and Schmeiβer, D.: Nucl. Instrum. Meth. B 246 (1), 85 (2006) in press.
16 Hoffmann, P., Mikalo, R.P., and Schmeiβer, D., J. Non-Cryst. Solids 303 (1), 6 (2002).
17 Nicollian, E.H., and Goetzberger, A.: Bell Syst. Tech. J. 46, 1055 (1967).

Keywords

Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces

  • Karsten Henkel (a1), Mohamed Torche (a2), Rakesh Sohal (a3), Carola Schwiertz (a4), Patrick Hoffmann (a5) and Dieter Schmeißer (a6)...

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