Skip to main content Accessibility help
×
Home

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

  • Jun H. Souk (a1) and Gregory N. Parsons (a2)

Abstract

We have previously demonstrated selective area deposition of n+ microcrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-mediated silicon etching.

Copyright

References

Hide All
[1] Borland, J.O., Drowley, C.I., Solid State Technology 30 (8), 141 (1987).
[2] Ginsberg, B.J., Burghartz, J., Bronner, G.B., and Mader, S.R., IBM J.Res.Develop. 34, 816 (1990).
[3] Sedgewick, T.O., Berkenbilt, M., and Kuan, T.S., Appl.Phys.Lett. 54, 2689 (1989).
[4] Yew, T.R. and Reif, R., J.Appl.Phys. 65, 2500 (1989).
[5] Hiramatsu, M., Ishida, A., Kamimura, T., Kawakyu, Y. Jpn.J.Appl.Phys., 6B, 3106(1993).
[6] Parsons, G.N., Electron Device Lett. 13, 80 (1992).

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

  • Jun H. Souk (a1) and Gregory N. Parsons (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed