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Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

  • R. N. Ghosh (a1), S. Ezhilvalavan (a1), B. Golding (a1), S. M. Mukhopadhyay (a2), N. Mahadev (a2), P. Joshi (a2), M. K. Das (a3) and J. A. Cooper Jr (a4)...

Abstract

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as xray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

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1. Di Ventura, M. and Pantelides, S. T., “Atomistic Mechanisms of Oxygen Precipitation and Thin – Film Oxidation of SiC”, Phys. Rev. Lett. 83, 1624 (1999).
2. Afanasev, V. V., Bassler, M., Pensl, G. and Schulz, M., “Intrinsic SiC/SiO2 interface states”, Phys. Stat. Sol. A – Appl. Res. 162, 321 (1997).
3. Duscher, G.Atomic Scale Imaging and Spectroscopy of the SiO2 – SiC Interface”, Bull. Am. Phys. Soc., 45, 340 (2000).
4. Chang, K. C., Nuhfer, N. T., Porter, L. M. and Wahab, Q., “High-carbon concentrations at the silicon dioxide – silicon carbide interface identified by electron energy loss spectroscopy”, Appl. Phys. Lett. 77, 2186 (2000).
5. Jernigan, G. G., Stahlbush, R. E. and Saks, N. S., “Effect of oxidation and reoxidation on the oxide – substrate interface of 4H- and 6H-SiC”, Appl. Phys. Lett. 77, 1437 (2000).
6. Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A. and Yarmoff, J. A.Microscopic structure of the SiO2/Si interface”, Phys. Rev. B, 38, 6084 (1988).
7. Das, M. K., Cooper, Jr., J. A. and Melloch, M.R.Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO2/SiC Interface,J. Elec. Mat. 27, (1998).
8. Muehlhoff, L., Choyke, W. J., Bozack, M. J. and Yates, J. T., “Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)”, J. Appl. Phys. 60, 2842 (1986).

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