Skip to main content Accessibility help

μτ Products of 10−6 cm2V−1 Deduced from Eleverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H

  • Gautam Ganguly (a1) and Akihisa Matsuda (a1)


The room temperature hole drift mobility measured by the ‘time-of-flight’ technique can be increased to 0.5 cm2/Vs with a valence band tail width of 25meV by optimizing the ion impingement energy during film growth using a triode configured PECVD reactor. The reverse bias dependence of the carrier collection in Au Schottky diodes formed on these specimens show significantly improved carrier collection which can be approximately quantified using the C-V measured voltage dependent depletion widths to yield μτ≈10−6cm2V−1.



Hide All
1. Santos, P.V., Johnson, N.M. and Street, R.A., MRS Symp. Proc. 258, 353 (1992).
2. Yiping, Z., Dianlin, Z., Guanglin, K., Guangqin, P. and Xianbo, L., Phys. Rev. Lett. 74, 558 (1995).
3. Ganguly, G. and Matsuda, A., in ref. 1, p-39.
4. Nishio, H., Ganguly, G. and Matsuda, A., MRS Spmp. Proc. 297, 91 (1993).
5. Ganguly, G. and Matsuda, A., Tech. Digest. PVSEC-7 (Nagoya, 1993) p-25.
6. Street, R.A., Appl. Phys. Lett. 42 (1983) 507.
7. Ganguly, G. and Matsuda, A., MRS Symp. Proc. 336, 7 (1994).
8. Okushi, H., Yamasaki, S., Kawai, H., Hotta, M. and Tanaka, K., Jpn. J. Appl. Phys. 21, Suppl. 2 259 (1982).
9. Wronski, C.R., IEEE Trans. Electron Devices, ED-24, 351 (1977).
10. Crandall, R.S., Willams, R. and Tompkins, B.E., J. Appl. Phys. 50, 5506 (1979).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed