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Production Scale Growth of AlGaN/GaN Field Effect Transistors

  • David Gotthold (a1), Shawn Gibb (a1), Boris Peres (a1), Ian Ferguson (a2), Chris Palmer (a1) and Eric Armour (a1)...

Abstract

This paper addresses issues with the manufacturability of AlGaN/GaN FET structures. A robust Metalorganic Chemical Vapor Deposition growth process has been developed that will now allow reliability measurements to be obtained on the resulting devices. During a small scale production run mobilities in excess of 1600 cm2/V.s, sheet charge (Ns) between 0.8x1013 and 1.2x1013 cm-2, and Rs<400 Ω/square with less than 2% variation across the wafer and less than 0.5% variation from wafer to wafer were obtained. Issues for producing a manufacturable process on sapphire and semi-insulating SiC substrates using in-situ monitoring will be addressed. The equivalence of growth on sapphire and SiC substrates for process optimization will be shown.

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Corresponding author

*Corresponding email: David_Gotthold@EMCORE.com

References

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