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Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

  • H.-J. Voorma (a1), E. Louis (a1), N.B. Koster (a1), F. Bijkerk (a1) and M.J. van der (a1)...

Abstract

To obtain the optimal growth conditions of Mo/Si multilayer structures, produced with e-beam evaporation, the effect of using enhanced deposition temperatures is investigated in detail. We describe the variations of the structure for multilayers deposited at substrate temperatures ranging from 300 K to 550 K. A temperature of 490 K was found to be the optimum resulting in low interface roughness and moderate inter-diffusion. The decrease of the dspacing at the optimum substrate temperature, compared to coatings deposited at room temperature, is explained by a change in free volume of the Si layer.

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References

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Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

  • H.-J. Voorma (a1), E. Louis (a1), N.B. Koster (a1), F. Bijkerk (a1) and M.J. van der (a1)...

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