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Process-Structure Relationships of Nitrided Oxides and Oxynitrides

Published online by Cambridge University Press:  15 March 2011

Anindya Dasgupta  and
Christos G. Takoudis
Anindya Dasgupta
Affiliation:
Advanced Materials Research Laboratory, Department of Chemical Engineering, University of Illinois at Chicago, Chicago, IL 60607, U.S.A.
Christos G. Takoudis
Affiliation:
Advanced Materials Research Laboratory, Department of Chemical Engineering, University of Illinois at Chicago, Chicago, IL 60607, U.S.A.
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Abstract

The presence of nitrogen in the dielectric films is known to impart highly desirable properties in the ultra-large-scale-integration era; the position, amount and concentration profiles of nitrogen are therefore of great interest. In this work, we investigate two-step processes leading to bimodal nitrogen profiles, with one nitrogen peak near the Si/dielectric interface and the other near the dielectric surface. At 1000°C and 1 atm, a nitridation step with NH3 following either an oxidation (in O2) or oxynitridation (in N2O) step is found to result in a bimodal nitrogen concentration profile for short nitridation times. Increasing the duration of the nitridation step with NH3 is found to completely nitridate the entire film. Secondary Ion Mass, Angle Resolved X-Ray Photoelectron, and Fourier Transform Infrared Spectroscopic studies are shown to support these observations. Therefore, based on such process-property-structure relationships, the engineering of desired nitrogen concentration profiles in nano-dielectric materials of interest becomes possible. Such knowledge may have significant implications on micro- and nano-electronic applications of silicon oxynitrides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A10.4
Copyright
Copyright © Materials Research Society 2002

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