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Processing Of Shallow (Rp<150Å) Implanted Layers With Electron Beams

Published online by Cambridge University Press:  15 February 2011

G.B. Mcmillan ,
J.M. Shannon  and
H. Ahmed
G.B. Mcmillan
Affiliation:
Engineering Department University of Cambridge, Cambridge CB2 lPZ U.K.
J.M. Shannon
Affiliation:
Engineering Department University of Cambridge, Cambridge CB2 lPZ U.K.
H. Ahmed
Affiliation:
Engineering Department University of Cambridge, Cambridge CB2 lPZ U.K.
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Abstract

The multiple-scan method of electron beam annealing has been used to activate shallow (Rp<150Å), highly doped silicon layers produced by ion implantation of arsenic at 10keV. Beam conditions have been optimised (600Wcm−2 for 100ms) to produce essentially undiffused layers, as determined by high resolution SIMS, containing high concentrations of electrically active arsenic impurities. Computer modelling of diffusion effects in such layers has been used to identify optimum beam conditions and the calculations have been compared with experimental results. Hot electron device structures, which depend on negligible diffusion and high electrical activity, have been fabricated using the multiplescan method with a peak annealing temperature of 900°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 437
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Philips Research Laboratories, Redhill, Surrey, RHI 5HA, U.K.

References

REFERENCES

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