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Process-Dependent Electronic Structure at Metallized GaAs Contacts

  • L. J. Brillson (a1), I. M. Vitomirov (a1), A. Raisanen (a1), S. Chang (a1), R. E. Viturro (a1), P. D. Kirchner (a2), G. D. Pettit (a2) and J. M. Woodall (a2)...

Abstract

The influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

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1. Brillson, L.J., Surf. Sci. Repts. 2, 123(1982).
2. Rhoderick, E. H. and Williams, R. H., Metal - Semiconductor Contacts, 2nd edition (Clarendon, Oxford, 1988).
3. Brucker, C. F. and Brillson, L. J., Appl. Phys. Lett. 39, 67 (1981).
4. Waldrop, J. R. and Grant, R. W., Appl. Phys. Lett. 50. 250 (1987);
Grant, R. W. and Waldrop, J. R., J. Vac. Sci. Technol. B5, 1015 (1987).
5. Palmstrom, C. J., Cheeks, T. L., Gilchrist, H. L., Zhu, J. G., Carter, C. B., and Nahory, R. E., in Electronic, Optical, and Device Properties of Layered Structures, edited by Hayes, J. R., Hysbertson, M. S., and Weber, E. R. (Mater. Res. Soc. Press, Pittsburgh, PA, 1990), p. 63.
6. Viturro, R. E., Shaw, J. L., Mailhiot, C., Brillson, L. J., Tache, N., McKinley, J., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., and Wright, S. J., Appl. Phys. Lett. 52, 2052 (1988);
Viturro, R. E., Shaw, J. L., Brillson, L. J., Woodall, J. M., Kirchner, P. D., Pettit, G. D., and Wright, S. J., J. Vac. Sci. Technol. B6, 1397 (1988).
7. Chang, S., Vitomirov, I., Brillson, L. J., Rioux, D. S., Kirchner, P. D., Pettit, D., and Woodall, J. M., J. Vac. Sci. Technol. B9, 2129 (1991).
8. Chang, S., Brillson, L. J., Kime, Y. J., Rioux, D. S., Kirchner, P. D., Pettit, D., and Woodall, J. M., Phys. Rev. Lett. 64, 2551 (1990); J. Vac. Sci. Technol. B8. 1008 (1990).
9. Chang, S., Brillson, L. J., Rioux, D. S., Kirchner, P. D., Pettit, D., and Woodall, J. M., Phys. Rev. B44, 1391 (1991).
10. Chang, S., Viturro, R. E., and Brillson, L. J., J. Vac. Sci. Technol. A8, 3803 (1990).
11. Chang, S., Raisanen, A. D., Brillson, L. J., Shaw, J. L., KircHrTer, P. D., Pettit, G. D., and Woodall, J. M., J. Vac. Sci. Technol., in press.
12. Brillson, L. J., Richter, H. W., Slade, M. L., Weinstein, B. A., and Shapira, Y., J. Vac. Sci. Technol. A3, 1011 (1985).
13. Brillson, L. J. and Viturro, R. E., Scanning Electron Microscopy 2, 789 (1988).
14. Viturro, R. E., Slade, M. L., and Brillson, L. J., Phys. Rev. Lett. 57, 487 (1986).
15. Viturro, R. E., Slade, M. L., and Brillson, L. J., J. Vac. Sci. Technol. A5, 1516 (1987).
16. Vitomirov, I. M., Raisanen, A. D., Brillson, L. J., Kirchner, P. D., Pettit, G. D., and Woodall, J. M., J. Vac. Sci. Technol., in press.
17. Vitomirov, I. M., Raisanen, A. D., Viturro, R. E., Chang, S., Brillson, L. J., Kirchner, P. D., Pettit, G. D., and Woodall, J. M., J. Vac. Sci. Technol., in press.
18. Vitomirov, I. M., Raisanen, A. D., Brillson, L. J., Kirchner, P. D., Pettit, G. D., and Woodall, J. M., J. Electron. Mater., submitted.
19. Wager, J. F. and Van Vechten, J. A., Phys. Rev. B35, 2330 (1987).
20. Svensson, S. P., Landgren, G., and Andersson, T. G., J. Appl. Phys. 54, 4474 (1983).
21. Svensson, S. P., Kanski, J., Andersson, T. G., and Nilsson, P. O., J. Vac. Sci. Technol. B2, 235(1984).

Process-Dependent Electronic Structure at Metallized GaAs Contacts

  • L. J. Brillson (a1), I. M. Vitomirov (a1), A. Raisanen (a1), S. Chang (a1), R. E. Viturro (a1), P. D. Kirchner (a2), G. D. Pettit (a2) and J. M. Woodall (a2)...

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