Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-16T10:33:53.291Z Has data issue: false hasContentIssue false
  • English
  • Français

Process Physics of the Iron-Boron Pair Recombination and Dissociation in p-Type Silicon

Published online by Cambridge University Press:  03 September 2012

W. Wuaranakula
W. Wuaranakula*
Affiliation:
Research and Development Department, SEH America, Incorporated 4111 Northeast 112th Avenue, Vancouver, Washington 98682–6776, USA
Get access

Abstract

The process physics of the iron-boron pair recombination and dissociation in p-type silicon at temperatures below 300°C was studied. The result indicates that the recombination and dissociation processes depend strongly upon the relative position of the ionization energy of interstitial iron Efe+ and the Fermi level Ef. At temperatures T < (Efe+ - Ep)/k, the pairing reaction obeys first-order reaction kinetics while at temperatures T > (EFe+ - Ep)/k, an equilibrium between neutral and charged defect species prevails.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 561
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohsawa, A., Honda, K., Takizawa, R., Nakanishi, T., Aoki, M., and Toyokura, N., in Semiconductor Silicon 1990, edited by Huff, H. R., Barraclough, K. G., and Chikawa, I-i. (The Electrochemical Society, 90–7, Pennington, New Jersey, 1990) pp. 601–613;Google Scholar
Fujino, N., Hiramoto, K., Sono, M., Murakami, K., Horiye, H., Oka, Y., and Sumita, S., in Semiconductor Silicon 1990, edited by Huff, H. R., Barraclough, K. G., and Chikawa, I-i. (The Electrochemical Society, 90–7, Pennington, New Jersey, 1990), pp. 709–723.Google Scholar
2. Wijaranakula, W., unpublished.Google Scholar
3. Weber, E. R., Appl. Phys. A, 30, 1 (1983).CrossRefGoogle Scholar
4. Kimerling, L. C. and Benton, J. L, Physica 116B, 297 (1983).Google Scholar
5. Suezawa, M. and Sumino, K., in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by Wolford, D.J., Bemholc, J., and Haller, E. E. (Materials Research Society, 163, Pittsburgh, PA, 1990) pp. 233–238.Google Scholar
6. Watkins, G.D., in Defects in Semiconductor edited by Narayan, J. and Tan, T. Y., Elsevier North Holland, New York, 1981, pp. 21–30.Google Scholar
7. Kamiura, Y., Hashimoto, F., and Yoneta, M., J. Electrochem. Soc, 137, 3642 (1990).Google Scholar