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Process Modeling for Advanced Devices

  • Mark E. Law (a1), Kevin S. Jones (a2), Ljubo Radic (a1), Robert Crosby (a2), Mark Clark (a2), Kevin Gable (a2) and Carrie Ross (a2)...

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As device lots become more and more expensive, process modeling is increasingly important. Process simulation and modeling is increasingly sophisticated but the accuracy remains a problem. There is generally a time lag between the introduction of a particular process and its accurate modeling – the problem of “yesterday's technology modeled tomorrow”. For many problems, absolute accuracy isn't required. Relative trends provide excellent information about the process in question. For this reason, process simulation is still a useful technique for guiding process development.

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1. Crosby, Robert T., Jones, Kevin S., Law, Mark E., Larsen, A. Nylandsted and Hansen, J. Lundsgaard, “{311} Defect evolution in Si-implanted Si1−xGex alloys,” Materials Science in Semiconductor Processing, 6(4) Pages 205208, August 2003.
2. Haynes, T. E., Eaglesham, D. J. et al. , “Interactions of Ion-Implantation-Induced Interstitials with Boron at High Concentrations in Silicon.” Appl. Phys. Lett. 69(10), p. 13761378, 1996.
3. Lilak, A.D., Earles, S.K., Law, M.E., Jones, K.S., “Evolution of {311} Type Defects in Boron Doped Structures: Experimental Evidence of Boron-Interstitial Cluster Formation”, Applied Physics Letters, 74(14), p. 2038–40, April 5, 1999.
4. Avci, I., Law, M.E., Kuryliw, E., Saavedra, A.F., Jones, K.S., “Modeling Extended Defect ({311} and Dislocation) Nucleation and Evolution in Silicon”, Journal of Applied Physics, 95(5), p. 24522460, March 1, 2004.
5. Sadigh B, Lenosky TJ, Caturla MJ, Quong AA, Benedict LX, TD, de la Rubia, MM, Giles, Foad, M, CD, Spataru, SG, Louie, “Large Enhancement of Boron Solubility in Silicon due to Bi-axial Stress”, Applied Physics Letters, 80(25), p. 4738–40, June 24, 2002.
6. Fahey, P. M., Mader, S. R. et al. (1992). “Stress-Induced Dislocations in Silicon Integrated Circuits.” IBM Journal of Research and Development 36(2): 158182.
7. Chaudhry, S. and Law, M. E. (1997). “The Stress Assisted Evolution of Point and Extended Defects in Silicon.” Journal of Applied Physics 82(3): 11381146.
8. Aziz, M. J. (1997). “Thermodynamics of Diffusion Under Pressure and Stress: Relation to Point Defect Mechanisms.” Appl. Phys. Lett. 70(21): 28102812.

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