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Process Dependent Morphology of the Si/SiO2 Interface Measured with Scanning Tunneling Microscopy

Published online by Cambridge University Press:  22 February 2011

Michael H. Hecht ,
L. D. Bell ,
F. J. Grunthaner  and
W. J. Kaiser
Michael H. Hecht
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109
L. D. Bell
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109
F. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109
W. J. Kaiser
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology Pasadena, CA 91109
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Abstract

A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by post oxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 307
Copyright
Copyright © Materials Research Society 1988

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References

1. Hofmann, K. & Schulz, M., J. Electrochem. Soc. 132, 2201 (1985).Google Scholar
2. For example, d'Anterroches, C., J. Microsc. Spectrosc. Electron. 9, 147 (1984).Google Scholar
3. Grunthaner, P.J., Hecht, M.H., Grunthaner, F.J., Johnson, N.M., J. Appl. Phys. 61, 629 (1987) and unpublished data.Google Scholar
4. Hahn, P.O. and Henzler, M., J. Appl. Phys. 52, 4122 (1981); P.O. Hahn and M. Henzler, J. Vac. Sci. Technol. A2, 574 (1984).Google Scholar
5. Goodnick, S.M., Ferry, D.K., Wilmsen, C.W., Liliental, Z., Fathy, D., Krivanek, O.L., Phys. Rev. B 32, 8171 (1985).Google Scholar
6. Reviewed in Grunthaner, F.J. & Grunthaner, P.J., Materials Science Reports 1,65 (1986).Google Scholar
7. Bell, L.D., Kaiser, W. J., Hecht, M.H., Grunthaner, F.J., Appl. Phys. Lett., 52, 278 (1988); W.J. Kaiser, L.D. Bell, M.H. Hecht, F.J. Grunthaner, to appear in J. Vac. Sci. Technol.Google Scholar