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Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

  • Ying Wu (a1), W. Savin (a1), T. Fink (a1), N. M. Ravindra (a1), R. T. Lareau (a2), R. L. Pfeffer (a2), L. G. Yerke (a2) and C. Wrenn (a2)...

Abstract

Experimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

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Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

  • Ying Wu (a1), W. Savin (a1), T. Fink (a1), N. M. Ravindra (a1), R. T. Lareau (a2), R. L. Pfeffer (a2), L. G. Yerke (a2) and C. Wrenn (a2)...

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