- Cited by 17
Tanner, B. K. Turnbull, A. G. Stanley, C. R. Kean, A. H. and McElhinney, M. 1991. Measurement of aluminum concentration in epitaxial layers of AlxGa1−xAs on GaAs by double axis x‐ray diffractometry. Applied Physics Letters, Vol. 59, Issue. 18, p. 2272.
Wormington, M. Bowen, D. K. and Tanner, B. K. 1991. Principles and Performance of a PC-Based Program for Simulation of Grazing Incidence X-Ray Reflectivity Profiles. MRS Proceedings, Vol. 238, Issue. ,
Hudson, J. M. Powell, A. R. Bowen, D. K. Wormington, M. Tanner, B. K. Kubiak, R. A. and Parker, E.H.C. 1991. Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and Diffraction. MRS Proceedings, Vol. 239, Issue. ,
Powell, A R Bowen, D K Wormington, M Kubiak, R A Parker, E H C Hudson, J and Augustus, P D 1992. X-ray diffraction and reflectivity characterization of SiGe superlattice structures. Semiconductor Science and Technology, Vol. 7, Issue. 5, p. 627.
Tanner, B K 1993. X-ray scattering from multiple-layer structures forming Bragg-case interferometers. Journal of Physics D: Applied Physics, Vol. 26, Issue. 4A, p. A151.
Cho, Nam-Hoon Jang, Ki-Wan Lee, Jeong-Yong and Ro, Jae-Sang 1995. Mev Ion Induced Damages and their Annealing Behavior in Silicon. MRS Proceedings, Vol. 396, Issue. ,
Jenichen, B. Neuroth, H. Brar, B. and Kroemer, H. 1995. Structural Properties of InAs/AlSb Superlattices. MRS Proceedings, Vol. 379, Issue. ,
Cockerton, S Cooke, M L Bowen, D K and Tanner, B K 1995. Combined Room Temperature Photoluminescence And High Resolution X-Ray Diffraction Mapping Of Semiconductor Wafers. MRS Proceedings, Vol. 406, Issue. ,
Li, C. R. Tanner, B. K. Möck, P. Hogg, J. H. C. Lunn, B. and Ashenford, D. E. 1997. High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures. Il Nuovo Cimento D, Vol. 19, Issue. 2-4, p. 447.
Rodríguez, A. Rodríguez, T. Sanz-Hervás, A. Kling, A. Soares, J. C. da Silva, M. F. Ballesteros, C. and Gwilliam, R. M. 1997. Strain compensation by heavy boron doping in Si1–xGex layers grown by solid phase epitaxy. Journal of Materials Research, Vol. 12, Issue. 7, p. 1698.
Jenichen, B. Hey, R. Wassermeier, M. and Ploog, K. 1997. Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering. Il Nuovo Cimento D, Vol. 19, Issue. 2-4, p. 429.
Sanz-Hervás, A. Aguilar, M. Sánchez-Rojas, J. L. Sacedón, A. Calleja, E. Muñoz, E. Villar, C. Abril, E. J. and López, M. 1997. Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs. Journal of Applied Physics, Vol. 82, Issue. 7, p. 3297.
Tournié, E. Ongaretto, C. Laügt, M. and Faurie, J.-P. 1998. Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates. Applied Physics Letters, Vol. 72, Issue. 2, p. 217.
Bowen, D. K. Tanner, B. K. Wormington, Matthew Panaccione, Charles Matney, Kevin M. and Bowen, D. Keith 1999. Characterization of structures from X-ray scattering data using genetic algorithms. Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 357, Issue. 1761, p. 2827.
Tinkham, B. P. Bennett, B. R. Magno, R. Shanabrook, B. V. and Boos, J. B. 2005. Growth of InAsSb-channel high electron mobility transistor structures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue. 4, p. 1441.
Lee, S.R. Koleske, D.D. Crawford, M.H. and Wierer, J.J. 2012. Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells. Journal of Crystal Growth, Vol. 355, Issue. 1, p. 63.
Goorsky, Mark S. 2015. Handbook of Crystal Growth. p. 1211.
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PC-based software for the rapid simulation of double-axis X-ray rocking curves from epitaxial thin films by solution of the Takagi-Taupin equations is described. The principles of the mathematical model are discussed. Graded layers and interface roughness are treated by piece-wise approximation to linear or quadratic functions and fractional relaxation of each epilayer may be included. The reliability of the data-bases incororated are examined and the requirement for internal consistency demonstrated. Bench-mark tests are reported for various PC-compatible microcomputers. The shift in epilayer peak position, which occurs experimentally on reducing layer thickness at constant composition, is predicted in the simulations and compared with other simulated data in the literature. Detailed studies of generated data have been undertaken and compared with independent simulations and experimental data. Agreement is excellent.
Hide All1. Takagi, S., Acta Cryst 15, 1311 (1962).2. Taupin, D., Bull. Soc. Fr. Min. Crist. 87, 469 (1964).3. Halliwell, M. A. G., Juler, J. and Norman, A. G., Inst. Phys. Conf. Ser. 67, 365 (1983).4. Wie, C. R., J. Appl. Phys. 66, 985 (1989).5. International Tables for X-ray Crystallography, Kynoch Press, 1988.6. Landau, L. D. and Lifshitz, E. M., Elasticity (Pergamon, Oxford 1972).7. Hart, M., in Characterization of Crystal Growth Defects by X-ray Methods, edited by Tanner, B. K. and Bowen, D. K. (Plenum, New York, 1980) pp 421–432.8. Hill, M. J., Tanner, B. K., Halliwell, M. A. G. and Lyons, M. H., J Appl. Cryst. 18, 446 (1985).9. Green, G. S., Tanner, B. K., Barnett, S. J., Enemy, M., Pitts, A. D., Whitehouse, C. R. and Clark, G. F., Phil. Mag. Letts. 62, 131 (1990).10. Holloway, H., J. Appl. Phys. 67, 6229 (1990).11. Bowen, D. K. et al, Mater. Res. Soc. Symp. Proc. (1991) this conference.12. Bowen, D. K., Hart, L., Polcarova, M., Thomas, C. R. and Fisher, G. R., Nanotechnology 2 (1991), in press.
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