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Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

  • Sheng-Chun Hung (a1), Byung Hwan Chu (a2), Chih-Yang Chang (a3), Chien Fong Lo (a4), Ke Hung Chen (a5), S. J. Pearton (a6), Amir Dabiran (a7), P. P. Chow (a8), G. C. Chi (a9) and F. Ren (a10)...

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with a polarized Polyvinylidene difluoride (PVDF) film coated on the gate area exhibited significant changes in channel conductance upon exposure to different ambient pressures. The PVDF thin film was deposited on the gate region with an inkjet plotter. Next, the PDVF film was polarized with an electrode located 2 mm above the PVDF film at a bias voltage of 10 kV and 70 °C. Variations in ambient pressure induced changes in the charge in the polarized PVDF, leading to a change of surface charges on the gate region of the HEMT. Changes in the gate charge were amplified through the modulation of the drain current in the HEMT. By reversing the polarity of the polarized PVDF film, the drain current dependence on the pressure could be reversed. Our results indicate that HEMTs have potential for use as pressure sensors.

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Keywords

Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

  • Sheng-Chun Hung (a1), Byung Hwan Chu (a2), Chih-Yang Chang (a3), Chien Fong Lo (a4), Ke Hung Chen (a5), S. J. Pearton (a6), Amir Dabiran (a7), P. P. Chow (a8), G. C. Chi (a9) and F. Ren (a10)...

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