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Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation

  • Beom-jong Kim (a1), Dong-chan Kim (a1), Yoon-jae Kim. (a1), Han-jin Lim (a1), Ju-eun Kim (a1), Wook-yeol Yi (a1), Dae-hyun Kim (a1), Bong-hyun Kim (a1), Young-wan Kim (a1), Sung-ho Kang (a1), Yung-seok Kim (a1), Woo-jun Lee (a1), Seok-woo Nam (a1) and Chil-hee Chung (a1)...

Abstract

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

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