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Prepare of ZnAl2O4/-Al2O3 complex substrates and growth of GaN films

  • Z.X. Bi (a1), R. Zhang (a1), W. P. Li (a1), X.S. Wang (a1), S.L. Gu (a1), B. Shen (a1), Y. Shi (a1), Z.G. Liu (a1) and Y.D. Zheng (a1)...


With the solid phase reaction between the ZnO film and -Al2O3 substrate, the ZnAl2O4/-Al2O3 complex substrate have been prepared. GaN films were then directly grown on this new kind of substrate using light-radiation heating low-pressure metalorganic chemical vapor deposition (LRH-LP-MOCVD) without any nitride buffer layer. The structure and surface morphology of the ZnAl2O4/-Al2O3 substrates and GaN epilayers have been characterized by employing X-ray diffraction (XRD) and scanning electron microscope (SEM). The result show that as the thickness of ZnAl2O4 layer is increased, the film changes from a (111)-oriented single crystal to a poly-crystal, together with the surface morphology transforms from uniform islandsa a to the bulgy-line structure, leading to GaN films grown on ZnAl2O4/ -Al2O3 substrates varying from c-axis oriented single-crystal to poly-crystal.



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