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Preparations and Characterizations of Epitaxial SrBi2Ta2O9 Thin Films

  • Keisuke Saito (a1), Masatoshi Mitsuya (a2), Toshimasa Suzuki (a3), Yuji Nishi (a3), Masayuki Fujimoto (a3), Masanori Nukaga (a2), Isao Yamaji (a1), Takao Akai (a1) and Hiroshi Funakubo (a2)...

Abstract

Epitaxial (001)-, (116)- and pseudo (103)-oriented Sr0.35Bi2.2Ta2O9 (SBT (0.35/2.2/2.0)) films were successfully grown on (001), (110) and (111) SrTiO3 substrates, respectively. High-resolution X-ray diffraction reciprocal space mapping (HRXRD-RSM) measurements and pole figure measurements clearly indicated that the (116)-oriented SBT (0.35/2.2/2.0) film consisted of two growth domains those c-axis are separated 180° apart in in-plane and pseudo (103)-oriented SBT film consisted of three growth domains those c-axis are separated 120° apart in in-plane. Moreover, lattice parameter measurements indicated that SBT films grew in fully relaxed state.

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Preparations and Characterizations of Epitaxial SrBi2Ta2O9 Thin Films

  • Keisuke Saito (a1), Masatoshi Mitsuya (a2), Toshimasa Suzuki (a3), Yuji Nishi (a3), Masayuki Fujimoto (a3), Masanori Nukaga (a2), Isao Yamaji (a1), Takao Akai (a1) and Hiroshi Funakubo (a2)...

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