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Preparation, Structure and Properties of VOx and TiO2 Thin Films By Mocvd

  • H. L. M. Chang (a1), J. C. Parker (a1), H. You (a1), J. J. xu (a1) and D. J. Lam (a1)...

Abstract

Titanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800°C. Processing parameter-structureproperty relationship was examined in detail and the result is presented.

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References

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[1] Ryabova, L.A., in Current Topics in Materials Science, Vol.7, ed. Kaldis, E. (North-Holland Publishing Co., Amsterdam, 1981), Chap. 5.
[2] Parker, J.C., Chang, H.L.M., Xu, J.J., and Lam, D.J., this Proceedings.
[3] Ohsaka, T., Izumi, F., Fujiki, Y., J. Raman Spec. 2, 321 (1978).
[4] Porto, S.P.S., Fleury, P.A., Damen, T.C., Phys. Rev. 14, 522 (1967).

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