Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-22T16:07:14.560Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of PZT-YBCO Heterostructure on YSZ Coated Si by KrF Laser Ablation

Published online by Cambridge University Press:  10 February 2011

Kenji Ebihara ,
Fumiaki Mitsugi ,
Tomoaki Ikegam  and
Jagdish Narayan
Kenji Ebihara
Affiliation:
Department of Electrical Engineering and Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, Japan
Fumiaki Mitsugi
Affiliation:
Department of Electrical Engineering and Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, Japan
Tomoaki Ikegam
Affiliation:
Department of Electrical Engineering and Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, Japan
Jagdish Narayan
Affiliation:
Department of Materials and Science, North Carolina State University, Raleigh, NC, USA
Get access

Abstract

KrF excimer laser ablation technique is used to fabricate the ferroelectric Pb(ZrxTi1−xO3)(PZT) capacitor on Si(100) substrate. The superconducting YBa2Cu3O71−x(YBCO) and the colossal magnetoresistive La0.8sr0.2MnO3(LSMO) thin films are used as bottom electrodes for the ferroelectric capacitive structure. The YBCO and LSMO films were studied to understand the interface problems with perovskite oxide films. The fabricated PZT/YBCO/YSZ/Si capacitor shows the ferrolectric properties of the remanent polarization of 20pC/cm2 and the coercive field of 40 kV/cm. Post-thermal annealing improves the ferroelctric properties and the results are comparable with that of the PZT/YBCO/MgO(100) structure. The leakage current of the PZT capacitor is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 341
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Alexe, M., Senz, St., Pignolet, A., Scott, J.F., Hesse, D., and Goself, U.; Materials Research Society Symposium Proceeding. “Ferroelectric Thin Films VI”, Vol. 493, 517 (1998).Google Scholar
2 Kurogi, H., Yamagata, Y., Ebihara, K., Inoue, N.; Surface and Coatings Technology, Vol. 100/101, 424 (1998).Google Scholar
3 Grishin, A.M., Yamazato, M., Yamagata, Y., and Ebihara, K.; Appl. Phys. Lett. Vol.72, 620 (1998).Google Scholar
4 Ebihara, K., Mitsugi, F., Yamazato, M., Ikegami, T., Narayan, J.; Materials Research Society Symposium Proceeding “Materials for Smart Systems III” (2000, in press).Google Scholar