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Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

  • Tomonori Ikegami (a1), Iwao Kawayama (a2), Masayoshi Tonouchi (a3), Yoshiro Yamashita (a4) and Hirokazu Tada (a5)...

Abstract

Spin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages

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Keywords

Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

  • Tomonori Ikegami (a1), Iwao Kawayama (a2), Masayoshi Tonouchi (a3), Yoshiro Yamashita (a4) and Hirokazu Tada (a5)...

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