Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-20T04:05:01.301Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Ge2Sb2Te5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns

Published online by Cambridge University Press:  01 February 2011

Shin Kikuchi ,
Yutaka Nishioka ,
Isao Kimura ,
Takehito Jimbo ,
Masahisa Ueda ,
Yutaka Kokaze  and
Koukou Suu
Shin Kikuchi
Affiliation:
shin_kikuchi@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono , Shizuoka, 410-1231, Japan, +81-55-998-1569, +81-55-998-1767
Yutaka Nishioka
Affiliation:
yutaka_nishioka@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Isao Kimura
Affiliation:
isao_kimura@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Takehito Jimbo
Affiliation:
takehito_jinbo@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Masahisa Ueda
Affiliation:
masahisa_ueda@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Yutaka Kokaze
Affiliation:
yutaka_kokaze@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Koukou Suu
Affiliation:
koukou_suu@ulvac.com, ULVAC,Inc., Institute for Semiconductor Technologies, 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Get access

Abstract

Phase Change Random Access Memory [PRAM] is one of the candidates for next generation memory due to its non-volatility, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film, an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.

In order to integrate PRAM to beyond 512Mbit, a high writing current and degradation of cell transition at small cell size become a problem. To resolve these problem, Confined Cell structure PRAM was suggested. However, it was difficult to fill GST layer in a small hole with a conventional sputtering tool because a big overhang occurred.

In this work, we prepared GST films on the small hole patterned wafer by a new concept sputtering tool which designed developed a new concept sputtering tool. The structure of GST film was observed with cross section SEM and the film composition was measured with XRF.

It was observed an overhang was suppressed and a GST film was filled in a small hole with a new concept tool. In addition, the uniformity of the GST film composition was good at less than 1% in 200mm φ substrate.

Keywords

sputteringGeSb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I12-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ovshinsky, S.R.: Phys.Rev.Lett. 21 (1968)1450.Google Scholar
2. Cho, S. L. et al. , 2005 Symposium on VLSI Technology Digest of Technical Papers,6B-1.Google Scholar
3. Motegi, N. et al. , Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 13(1995), pp. 1906–1909 Google Scholar