Article contents
Preparation of Ferroelectric Films of LiNbO3 and SbSI by Artificial Epitaxy.
Published online by Cambridge University Press: 25 February 2011
Abstract
Highly–ordered, up to nearly–single–crystalline films of SbSI and LiNbO3 on amorphous substrates (oxidized silicon, fused quartz) were prepared by laser zone–melting recrystallization basing on principles of artificial epitaxy, or graphoepitaxy. Some conclusions are made about tentative orientation mechanism(s) in these processes.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
- 1
- Cited by