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Preparation and Residual Stress Characterisation of Polycrystalline Silicon Germanium Films Grown by Atmospheric Pressure Chemical Vapour Deposition

  • P. Fiorini (a1), S. Sedky (a1), M. Caymax (a1) and C. Baert (a1)

Abstract

Polycrystalline silicon-germanium alloys (poly-SiGe) are deposited by chemical vapour deposition at atmospheric and reduced pressure. The stress, as well as its profile along the growth direction, are measured. Depending on the deposition pressure the stress can be compressive or tensile, the profile of the stress is in both cases rather uniform. The behaviour of the stress as a function of annealing temperature is also investigated. Films which are compressive as grown can be made tensile by annealing, films which are tensile as grown remains tensile even after high temperature annealing.

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Preparation and Residual Stress Characterisation of Polycrystalline Silicon Germanium Films Grown by Atmospheric Pressure Chemical Vapour Deposition

  • P. Fiorini (a1), S. Sedky (a1), M. Caymax (a1) and C. Baert (a1)

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