Hostname: page-component-7c8c6479df-hgkh8 Total loading time: 0 Render date: 2024-03-28T17:54:57.725Z Has data issue: false hasContentIssue false

Preparation and Property Characterization of Oriented PLZT Thin Films Processed Using Sol-Gel Method

Published online by Cambridge University Press:  15 February 2011

Dae Sung Yoon
Affiliation:
Department of Ceramic Science and Engineering
Chang Jung Kim
Affiliation:
Department of Ceramic Science and Engineering
Joon Sung Lee
Affiliation:
Department of Ceramic Science and Engineering
Chaun Gi Choi
Affiliation:
Department of Ceramic Science and Engineering
Won Jong Lee
Affiliation:
Department of Electronic Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea.
Kwangsoo No
Affiliation:
Department of Ceramic Science and Engineering
Get access

Abstract

Highly preferentially oriented lead lathanum zirconate titanate(PLZT) thin films were fabricated on various substrates using the spin coating of metal organic solutions having the composition of (9/50/50) and (10/0/100). The substrates used in this study were SrTiO3(100), MgO(100), r-plane sapphire, PLT-coated glass, and Pt/Ti/MgO substrates. The films were heat-treated at 600°C and 700°C using the direct insertion method. The phases and the orientation of the PLZT thin films were examined using X-ray diffraction(XRD). Pole figure and X-ray rocking curves were measured to study the film orientation. The films were grown with (100), (110), and (001) plane being parallel to the surfaces of SrTiO3, sapphire, and Pt/Ti/MgO, respectively. The dielectric and optical properties of both the oriented films and the noncrystalline films were measured and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yi, G., Wu, Z. and Sayer, M., J. Appl. Phys. 64, 2717 (1988).CrossRefGoogle Scholar
2. Vest, R. W. and Wu, J., Ferroelectrics 93, 21 (1989).CrossRefGoogle Scholar
3. Peng, C. H., Chang, J. and Desu, S. B. in Ferroelectric Thi Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Boston, Massachusetts, 1991), p.21.Google Scholar
4. Borrelli, P. J., Ballentine, P. H. and Kadin, A. M. in Ferroelectric Thi Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Boston, Massachusetts, 1991), p.417.Google Scholar
5. Wegner, A. B., Brueck, S. R. J. and Wu, A. Y., Ferroelectrics 116, 195 (1991).CrossRefGoogle Scholar
6. Mihara, T., Watanabe, H., Yoshimori, H., Paz de Araujo, C. A., Melnick, B., and Mcmillan, L. D., Integrated Ferroelectrics 1, 119 (1992).CrossRefGoogle Scholar
7. Baringay, C. K. and Dey, S. K., Appl. Phys. Lett. 61, 1278 (1992).CrossRefGoogle Scholar
8. Yoon, D. S., Kim, C. J., Lee, J. S., Lee, W. J. and No, K., J. Mater. Res. 9, 420 (1994).CrossRefGoogle Scholar
9. Rou, S. H., Graettinger, T. M., Chow, A. F., Soble, C. N., Lichtenwalner, D. J., Auciello, O. and Kingon, A. I. in Ferroelectric Thi Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Boston, Massachusetts, 1991), p.81.Google Scholar
10. Lee, J. S., Kim, C. J., Yoon, D. S., and No, Kwangsoo, submitted to Jpn. J. Appl. Phys. (1994).Google Scholar