Skip to main content Accessibility help
×
Home

Preparation and Properties of Porous Bismuth Films

  • W. -N. Shen (a1), B. Dunn (a1), F. Ragot (a1), M. S. Goorsky (a1), C. D. Moore (a1), G. Chen (a2), R. Gronsky (a3), W. W. Fuller-Mora (a4), D. J. Gillespie (a4) and A. C. Ehrlich (a4)...

Abstract

The use of chemical solution routes to form inorganic thin films is a relatively new method which represents an alternative to vapor phase routes. The present study involves the use of a chemical solution route, the decomposition of metal carboxylates, to prepare bismuth thin films of controlled porosity. Such morphologies offer the opportunity to disrupt phonon transport without greatly affecting electrical conductivity and bismuth represents a well known system in which to investigate these effects. Porous bismuth thin films have been prepared using bismuth 2-ethylhexanoate (Bi[OOCCH(C2H5)C4H9]3) as the precursor in a solvent of 2-methyl- 1-propanol. The solution is deposited on glass, Kapton, silicon, alumina or magnesia substrates by spin coating and heated to between 250 – 300°C in hydrogen. Heat treatment temperature and time are important for controlling film microstructure as both pore volume (25 to 50%) and preferred orientation depend upon heat treatment conditions. Bismuth films (62 nm thick) with 32% porosity exhibit conductivities in the range of 150 S/cm with Seebeck coefficients comparable to that of bulk materials.

Copyright

References

Hide All
1. Dresselhaus, M.S., Sun, X., Cronin, S.B., Koga, T., Dresselhaus, G. and Wang, K.L., Mat. Res. Soc. Symp. Proc. 478, 55 (1997).
2. Lidorenko, N.S., Narva, O.M., Dudkin, L.D. and Erofeev, R.S., Neorg. Mater. 6, 2112 (1970).
3. Mantese, J.V., Micheli, A.L., Hamdi, A.H. and Vest, R.W., MRS Bull. 14, 48 (1989)
4. Segal, D., J. Mater. Chem. 7, 1297 (1997).
5. Lange, F.F., Science 273, 903 (1996).
6. Sandhu, G.S., U.S, Patent No. 5691009 (1997).
7. Wormington, M., Pape, I., Hase, T. P. A., Tanner, B. K. and Bowen, D. K., Phil. Mag. Lett. 74, 211 (1996).
8. Grazing Incidence X-Ray Scattering Software, Bede Scientific Inc.
9. Tritt, T.M., Nolas, G.S., Slack, G A., Ehrlich, A.C., Gillespie, D J., Cohn, J.L., J. Appl. Phys. 79, 8412 (1996).
10. Volklein, F. and Kessler, E., Phys. Stat. Sol, A 81, 585 (1984); Phys. Stat. Sol. B 134, 351 (1986); 143, 121 (1987).

Preparation and Properties of Porous Bismuth Films

  • W. -N. Shen (a1), B. Dunn (a1), F. Ragot (a1), M. S. Goorsky (a1), C. D. Moore (a1), G. Chen (a2), R. Gronsky (a3), W. W. Fuller-Mora (a4), D. J. Gillespie (a4) and A. C. Ehrlich (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed