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Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations

Published online by Cambridge University Press:  01 February 2011

Chihak Ahn ,
Jakyoung Song  and
Scott T Dunham
Chihak Ahn
Affiliation:
chahn@u.washington.edu, ., ., ., ., ., United States
Jakyoung Song
Affiliation:
jakyoung_song7@yahoo.com, University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
Scott T Dunham
Affiliation:
dunham@ee.washington.edu, University of Washington, Electrical Engineering, Seattle, WA, 98195, United States
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Abstract

Using an extensive series of first principles calculations, we have developed general models for the change in energy of boron migration state via interstitial mechanism as a function of local alloy configuration. The model is based on consideration of both global strain compensation as well as local effects due to nearby arrangement of Ge atoms. We have performed KLMC (Kinetic Lattice Monte Carlo) simulations based on change in migration energy to explain the reduced B diffusion in strained SiGe and compared our results to experimental observations. These models include significant effects due to both global stress and local chemical effects, and accurately predict the B diffusivity measured experimentally in strained SiGe on Si as a function of Ge content.

Keywords

BdiffusionSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-07
Copyright
Copyright © Materials Research Society 2006

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