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Prediction of High Dose Ion Implantation Profiles as Influenced by Radiation Induced Transport and Sputtering

  • M. Rangaswamy (a1) and D. Farkas (a1)

Abstract

Various models for predicting high fluence ion collection profiles are reviewed. Recent calculations based on the diffusion approximation are described. The solute and defect probability distributions are calculated by a MONTECARLO code, TRIM. The method takes into account the effects of sputtering, including preferential sputtering of one of the components, and lattice dilation. In addition, the effects of radiation enhanced diffusion and radiation induced segregation are also considered. The calculations include the coupling of solute and defect fluxes. The described formalism can account for observed maximum attainable concentrations and distributions in high fluence implantation conditions of practical interest.

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Prediction of High Dose Ion Implantation Profiles as Influenced by Radiation Induced Transport and Sputtering

  • M. Rangaswamy (a1) and D. Farkas (a1)

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