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Prediction and Prevention of Stress Migration and Electromigration Damage in Passivated Lines

  • P. Bergesen (a1), M. A. Korhonen (a1) and C.-Y. Li (a1)

Abstract

Based on recent theoretical progress we discuss current and potential new remedies for thermal stress and electromigration induced damage and failure in microelectronic interconnects. We present a new idea involving the patterning of alternately adhering and non-adhering interfaces between metal and surroundings, and briefly discuss the potential for predicting failure and/or extrapolating accelerated test results to service conditions and into the so-called ‘six-sigma’ range.

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References

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