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Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

Published online by Cambridge University Press:  25 February 2011

C. K. Chiang ,
W. Wong-Ng ,
L. P. Cook ,
P. K. Schenck ,
H. M. Lee ,
P. S. Brody ,
K. W. Bennett  and
B. J. Rod
C. K. Chiang
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
W. Wong-Ng
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
L. P. Cook
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
P. K. Schenck
Affiliation:
National Institute of Standards and Technology Gaithersburg, MD 20899
H. M. Lee
Affiliation:
Guest scientist from Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD
P. S. Brody
Affiliation:
Harry Diamond Laboratories Adelphi, MD 20783
K. W. Bennett
Affiliation:
Harry Diamond Laboratories Adelphi, MD 20783
B. J. Rod
Affiliation:
Harry Diamond Laboratories Adelphi, MD 20783
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Abstract

PZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 519
Copyright
Copyright © Materials Research Society 1992

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References

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