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Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films

Published online by Cambridge University Press:  15 February 2011

J. P. Conde ,
P. Brogueira  and
V. Chu
J. P. Conde
Affiliation:
Department of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1096 Lisboa Codex, Portugal, pcfconde@alfa.ist.utl.pt
P. Brogueira
Affiliation:
Department of Physics, Instituto Superior Técnico, Av. Rovisco Pais, 1096 Lisboa Codex, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, Rua Alves Redol 9, 1000 Lisboa, Portugal
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Abstract

Amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 779
Copyright
Copyright © Materials Research Society 1997

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References

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