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Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

Published online by Cambridge University Press:  25 February 2011

L. Dori ,
M. Arienzo ,
Y. C. Sun ,
T. N. Nguyen  and
J. Wetzel
L. Dori
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
M. Arienzo
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Y. C. Sun
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
T. N. Nguyen
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
J. Wetzel
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Ultrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 259
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Kern, W. and Puotinen, D., RCA Rev. 31, 187 (1970).Google Scholar
2. Nguyen, T., J. Electrochem. Soc. Spring Meeting, Boston, MA, May 4–9, 1986, Abstract N. 701 RNP.Google Scholar
3. Nicollian, E.H. and Brews, JR., in MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons Publishers, New York, 1982) p. 319.Google Scholar
4. Arienzo, M., Dori, L., and Szabo, T.N., Appl.Phys. Lett. 49,1040 (1986).Google Scholar
5. Cohen, S.S., J. Electrochem. Soc. 130,929 (1983).CrossRefGoogle Scholar
6. Tiller, W.A., J.Electrochem. Soc. 127, 65 (1980).Google Scholar
7. Moslehi, M.M., and Saraswat, K.C., IEDM, 157 (1984).Google Scholar
8. Hecht, M.H., Grunthaner, P.J., and Grunthaner, F.J., J. Electrochem. Soc. Spring Meeting, Boston, MA, May 4–9, 1986, Abstract N. 262.Google Scholar
9. Hahn, P.O., and Henzler, M., J. Vac.Sci.Technol. A2, 574 (1984).Google Scholar
10. Hahn, P.O., and Henzler, M., J. Appl.Phys. 52, 4122 (1981).Google Scholar
11. Poindexter, E.H., Gerardi, G.J., Rueckel, M.E., and Caplan, P.J., J. Appl. Phys. 56, 2844 (1984).Google Scholar
12. Sakurai, T., and Sugano, T., J. Appl. Phys. 52, 2889 (1981).Google Scholar
13. Aslam, M., Balk, P., and Young, D.R., Solid State Electronics 27, 709 (1984).Google Scholar
14. Weinberg, Z.A.,Young, D.R., Calise, J.A., Cohen, S.A., Deluca, J.C., and Deline, V.R., Appl. Phys. Lett. 45, 1204 (1984).Google Scholar
15. Weinberg, Z.A., and Nguyen, T.N., to be published on J. Applied Phys.Google Scholar
16. Chen, I.C., Holland, S.E., and Hu, C., IEEE Trans. Electron Devices ED–32, 413 (1985).CrossRefGoogle Scholar