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Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO2 Doped with Transition Metals

  • S. Veprek (a1), Th. Wirschem (a1), J. Dian (a1), S. Perná (a1), R. Merica (a1), M. G. J. Veprek-Heijman (a1), V. Perina (a2), M. Fuss (a3) and X. Lin (a3)...

Abstract

The nc-Si/a-SiO2 composite thin films doped with tungsten show very fast and efficient photoluminescence (PL). In order to obtain insight into the PL mechanism we have performed a comparative study with other metals. The results lend support to the suggested mechanism which includes the photogeneration of charge carriers due to efficient absorption of the excitation UV light in the silicon nanocrystals followed by energy transfer to the Wn+ radiative center from which the light emission occurs.

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Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO2 Doped with Transition Metals

  • S. Veprek (a1), Th. Wirschem (a1), J. Dian (a1), S. Perná (a1), R. Merica (a1), M. G. J. Veprek-Heijman (a1), V. Perina (a2), M. Fuss (a3) and X. Lin (a3)...

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