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Possibility of a Si-Based Infrared Detector Using Microcrystalline B-Si-Ge Alloys

Published online by Cambridge University Press:  21 February 2011

Y. Osaka ,
K. KOhno  and
P. Shresta
Y. Osaka
Affiliation:
Hiroshima University,Higashihiroshima 724, Japan
K. KOhno
Affiliation:
Hiroshima Electric University, Hiroshima 739-03, Japan
P. Shresta
Affiliation:
Hiroshima University,Higashihiroshima 724, Japan
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Abstract

Microcrystalline films of B-Si-Ge alloy have been deposited by the sputtering of Ge target in atmosphere of SiH4 and B2H6. Microcrystalline B-Si-Ge alloy/Si hetero-junction was fabricated on p-type Si(100) wafers with the resistivity of 1∼10 Ωcm. The barrier height of this Schottky structure was estimated to be in the range of 0.20∼0.30 eV which can be controlled by inclusion amounts of boron. The reverse biased Schottky characteristic using the microcrystalline B-Si-Ge alloy as to the gate shows the avalanche breakdown by illuminating of 6 μm light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 285
Copyright
Copyright © Materials Research Society 1992

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References

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