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Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films

Published online by Cambridge University Press:  10 February 2011

B.A. Akimov ,
V.A. Bogoyavlenskiy ,
L.I. Ryabova  and
V.N. Vasil'kov
B.A. Akimov
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
V.A. Bogoyavlenskiy
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
L.I. Ryabova
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
V.N. Vasil'kov
Affiliation:
Research Development and Production Center ORION, Moscow 111123, Russia
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Abstract

We report on the photoconductivity and transient in n-PbTe(Ga) epitaxial films prepared by the hot wall technique on the <11 I>-BaF2 substrates. Photoconductivity measurements performed under continuous and pulse illumination in the temperature range 4.2-300 K give the photoresponse to be composed from negative and positive parts. The experimental results are interpreted assuming the mixed valence of Ga in lead telluride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 327
Copyright
Copyright © Materials Research Society 2000

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