Hostname: page-component-7bb8b95d7b-dvmhs Total loading time: 0 Render date: 2024-09-11T11:17:24.757Z Has data issue: false hasContentIssue false
  • English
  • Français

Positive and Negative Luminescent Infrared Sources and Their Applications

Published online by Cambridge University Press:  10 February 2011

T. Ashley
T. Ashley*
Affiliation:
Defence Evaluation and Research AgencySt. Andrews Road, Malvem, Worcestershire, WR14 3PS, UK. tashley@dera.gov.uk
Get access

Abstract

We describe uncooled mid-infrared light emitting and negative luminescent diodes made from indium antimonide based IlI-V compounds, and long wavelength devices made from mercury cadmium telluride. The techniques to produce large area positive and negative luminescent sources, and the application of these devices to gas sensing, improved thermal imagers and imager testing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 153
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Johnson, A. D., this conference, paper F3.5Google Scholar
2. Ashley, T., Elliott, C.T. and Harker, A.T., Infrared Phys., 26, 303 (1986)Google Scholar
3. Elliott, C.T., Semicond. Sci. Technol., 55, S30 (1990)Google Scholar
4. Ashley, T. and Elliott, C.T., Proc. NATO workshop ‘Narrow Gap Semiconductors’, Oslo, Norway, 1991, in Semicond. Sci. Technol., 6, C99 (1991)Google Scholar
5. Ashley, T., Dean, A.B., Elliott, C.T., Johnson, A.D., Pryce, G.J., White, A.M. and Whitehouse, C.R., Proc. 6th Int. conf. ‘Narrow Gap Semiconductors’, Southampton, UK, 1992, in Semicond. Sci. Technol., 8, S386 (1993)Google Scholar
6. Ashley, T., Beswick, J.A., Cockayne, B. and Elliott, C.T., Proc. 7th Int. conf. on Narrow-Gap Semiconductors, Santa Fe, NM, USA, 9–12 Jan 1995, IoP Conf. Series 144, 209 (1995)Google Scholar
7. Johnson, A.D., Jefferies, R., Pryce, G.J., Beswick, J.A., Ashley, T., Newey, J., Elliott, C.T. and Martin, T., Proc. Symp. O, MRS Fall Meeting 1996 Google Scholar
8. White, A.M., International Patent Application PCT/GB96/02403Google Scholar
9. Irvine, S.J.C., Tunnicliffe, J. and Mullin, J.B., Mater. Lett., 2, 305 (1984)Google Scholar
10. Maxey, C.D., Gale, I.G., Clegg, J.B. and Whiffen, P.A.C., Semicond. Sci. Technol., 8, S183 (1993)Google Scholar
11. Moss, T.S., Burrell, G.J. and Ellis, B., ‘Semiconductor Opto-Electronics’, Butterworths, 1973 Google Scholar
12. Gooch, C.H., ‘Injection Electroluminescent Devices’, John Wiley & Sons, 1973 Google Scholar
13. Gordon, N. T., Jones, C.L. and Purdy, D.J., Infrared Phys., 31, 599 (1991)Google Scholar
14. Welford, W.T. and Winston, R., ‘The Optics of Nonimaging Concentrators’, Academic Press 1978 Google Scholar
15. Elliott, C.T., Gordon, N.T. et. al., J. Elect. Mater., 25, 1139 (1996)Google Scholar
16. Gordon, N.T., private communiationGoogle Scholar
17. Ashley, T., Elliott, C.T., Gordon, N.T., Phillips, T.J. and Hall, R.S., Infrared Phys. Technol., 38 145 (1997)Google Scholar
18. Wang, C.H., Crowder, J.G., Mannheim, V., Ashley, T., Dutton, D.T., Johnson, A.D., Pryc, G. J. and Smith, S.D., to be publishedGoogle Scholar