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Porous Silicon as a Sacrificial Material for Micromachining of Silicon Optical Platforms

Published online by Cambridge University Press:  10 February 2011

M. Guendouz ,
P. Joubert ,
N. Pedrono  and
J. Le Rouzic
M. Guendouz
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; IUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
P. Joubert
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; IUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
N. Pedrono
Affiliation:
France-Télécom, CNET, 2 Avenue Pierre Marzin, 22307 Lannion Cedex, France
J. Le Rouzic
Affiliation:
France-Télécom, CNET, 2 Avenue Pierre Marzin, 22307 Lannion Cedex, France
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Abstract

Porous silicon obtained by the anodization of heavily doped n+-type silicon wafers was used as a sacrificial layer to micromachine silicon platforms. The effect of experimental parameters, such as the nature of the masking layer, current density and anodization time, on the geometry of the porous Si formed in patterned substrate is shown. Advantages of this method on the orientation-dependent chemical etching (ODCE), which is classically used for optical fiber alignment, are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 373
Copyright
Copyright © Materials Research Society 1998

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