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Porosity-Induced Optical Phonon Engineering in III-V Compounds

  • I. M. Tiginyanu (a1), G. Irmer (a1), J. Monecke (a2), H. L. Hartnagel (a3), A. Vogt (a3), C. Schwab (a4) and J.-J. Grob (a4)...

Abstract

New possibilities for modifying the phonon spectra of III-V compounds are evidenced by micro-Raman analysis of porous layers prepared by electrochemical anodization of (111 )Aoriented n-GaP substrates. In particular, a surface-related vibrational mode along with a porosity-induced decoupling between the longitudinal optical (LO) phonon and plasmon are observed. We prove that filling in the pores with other materials (aniline as a first approach) is a promising tool for controlling the surface phonon frequency.

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Porosity-Induced Optical Phonon Engineering in III-V Compounds

  • I. M. Tiginyanu (a1), G. Irmer (a1), J. Monecke (a2), H. L. Hartnagel (a3), A. Vogt (a3), C. Schwab (a4) and J.-J. Grob (a4)...

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