Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T10:48:58.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Polytype Stability and Defect Reduction in 4H-SiC Crystals Grown via Sublimation Technique

Published online by Cambridge University Press:  10 February 2011

R. Yakimova ,
T. Iakimov ,
M. Syvdijarvi ,
H. Jacobsson ,
P. Råback ,
A. Vehanen  and
E. Janzén
R. Yakimova
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Okmetic AB, Box 255, 17824 Ekerö, Sweden
T. Iakimov
Affiliation:
Okmetic AB, Box 255, 17824 Ekerö, Sweden
M. Syvdijarvi
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. Jacobsson
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P. Råback
Affiliation:
Center for Scientific Computing, P.O. Box 405, FIN-02101 Espoo, Finland
A. Vehanen
Affiliation:
Okmetic Ltd., PO Box 44, FIN-01301 Vantaa, Finland
E. Janzén
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
Get access

Abstract

Reproducible growth of 4H-SiC with good crystalline quality has been obtained in a temperature interval around 2350°C and on 4H-SiC C-face seeds. It has been observed that morphological instability may appear at the initial stage of growth, causing formation of defects. Experimental evidence has been found that supersaturation and surface kinetics are responsible for the polytype stability, while growth front and growth mode address defect reduction. An explanation of the findings has been suggested. It has been shown that starting the growth with a relatively low growth rate ( ≈ 100 μm/h ) can be beneficial for the crystal quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 265
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Syväjärvi, M., Yakimova, R., Glans, P- A., Henry, A., MacMillan, M.F., Johansson, L.I., and Janzrn, E., J. Cryst. Growth 198–199 1019–1025 (1999).10.1016/S0022-0248(98)01090-2Google Scholar
2. Tuominen, M., Yakimova, R., Prieur, E., Ellison, A., Tuomi, T., Vehanen, A. and Janzrn, E., Diamond and Related Materials 6 1272–1275 (1997).10.1016/S0925-9635(97)00096-4Google Scholar
3. Tairov, Yu.M. and Tsvetkov, V.F., Progr. Crystal Growth Characterization 4 111–162 (1982).Google Scholar
4. Kanaya, M., Takahashi, J., Fujiwara, Y., and Moritani, A., Appl. Phys. Lett. 58 56–58 (1991).10.1063/1.104443Google Scholar
5. Augustine, G., Hobgood, H. Mc D., Balakrishna, V., Dunne, G., Hopkins, R.H., Phys. Stat. Sol. (b) 202 137–148 (1997).10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y3.0.CO;2-Y>Google Scholar
6. Vodakov, Yu. A., Mokhov, E.N., Roenkov, A.D., Anikin, M.M, Sov. Tech. Phys. Lett. 5 147–148 (1979).Google Scholar
7. Stein, R.A. and Lanig, P., J. Cryst. Growth 131 71–74 (1993).10.1016/0022-0248(93)90397-FGoogle Scholar
8. Carter, C.H. Jr, Tsvetkov, V.F., Henshall, D., Kordina, O., Irvine, K., Singh, R., Allen, S.T. and Palmour, J.W., 2nd ECSCRM'98, Sept. 2–4, 1998, Montpellier, France, Abstracts pp. 1–2 (1998).Google Scholar
9. Neudeck, P.G., Huang, W., and Dudley, M., Mat. Res. Soc. Symp. Proc. 483 285–294 (1998)10.1557/PROC-483-285Google Scholar
10. Epigress product information bulletin, 98.11.04Google Scholar
11. Okamoto, A., Sugiyama, N., Tani, T. and Kamiya, N., Mat. Sci. Forum 264–268 21–24 (1998).10.4028/www.scientific.net/MSF.264-268.21Google Scholar
12. Limpijumnong, S. and Lambrecht, W.R.L., Phys. Rev. B57 12017–12022 (1998).10.1103/PhysRevB.57.12017Google Scholar
13. Kuroda, T., Irisawa, T., Ookawa, A., J. Crystal Growth 42 41–46 (1977).10.1016/0022-0248(77)90176-2Google Scholar
14. Yakimova, R., Syväjärvi, M., Tuominen, M., lakimov, T., Rfback, P., Vehanen, A., and Janzrn, E., Mater. Sci. Eng. B (1999) in press 15. RAback, P., Ph. D. Thesis, Helsinki University of Technology, Finland (1999).Google Scholar